Gebraucht THOMAS SWAN GaN 6x2 #9014432 zu verkaufen

MOCVD reactor Application: growth of GaN based materials CCS Reactor for deposition on 6x2" substrate CCS - II chamber with flip-top lid Dual input plenum shower head injector with crossflow water cooling SiC coated Graphite Susceptor 3-Zone tungsten heater, Max. temperature 1200°C Optical access by three optical ports Quartz outer liner to prevent deposition on the chamber wall Heat exchanger to control showerhead water temperature Pyrometer for temperature calibration Integrated vacuum cleaner and vacuum wand Loadlock for substrate and accessory transfer Pressure control for growth chamber Overpressure relief system Glovebox with loadlock: Nitrogen recirculation and purification system Glove box pressure control Hygrometer to monitor the glove box environment Hydrogen gas detection within the glove box Low Pressure exhaust system: Two-stage particulate filtration system Stage 1 : Stainless Steel mesh Stage 2 : PALL particulate filter Computer Control System: Hardwired Safety System Softwarfe Safety interlocks Hydrogen detection points Gas handling system: (1) Hydrogen and Nitrogen Carrier gas manifolds (2) Epifold fast switching manifold Purge channels for Reactor, Heator, and Optical Ports Standard OM channels installed MO in 5 ports : TMGa, TEGa, TMAl, Cp2Fe, TMIn as standard 1port is for Cp2Mg as standard : not installed 2 MO channels unused Source Flow MFC Sorce Pressure Control Techne temperature baths (7) bathes with temperature controller + (1) bath without temperature controller Standard Gas Channels: NH3 1 & NH3 2 Double dilution Gas channels with double outlet Source, Dilute and two Injection MFC and back pressure check value, SiH4 Hydride Retro Channel: unused Differential pressure balancing between run and vent line on Epifold Optional: AERONEX CE 2500KF H 4R for H2 purification AERONEX CE 2500KF I 4R for N2 purification AERONEX CE 2500KF SK 4R for NH3 purification Epi TT / EPI curve in-situ monitoring tool Emissivity corrected pyrometry at 950nm Individual wafer measurement of surface temperature High positional resolution Real time measurement Growth rate measurement at selectable second wavelength 19" electronic controller, including light source and detector Epi R DA TT control unit Epi R DA TT light source EpiR DA TT coupling optics Epi curve electronic control unit Optic heads Light source / Light detection unit Mount components Previously used for GaNonSi growth (6) MO source lines Does not include scrubber Gas purification cells: (1) Hydride, (1) Hydrogen, (1) Nitrogen No flow sensors Close coupled shower head Dry vacuum pump: Ebara A255, 150m3/hr KSA monitoring instrument: Laytec system with reflectance and curvature Spare parts: (7) SiC coated Susceptor for 2" x 6 (1) SiC coated Susceptor for 2" x 7 (4) SiC coated Susceptor for 3" x 3 (6) SiC coated Susceptor for 4" x 1 (5) SiC coated Susceptor for 6" x 1 (3) Al2O3 suceptor suport (3) Al2O3 J-liner (9) Stainless Steel mesh filter (6) PALL particulate filter 2005 vintage.