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4175 results for found: benutzt Reactors

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    PICOSUN P-300B Atomic layer deposition (ALD) system, 12" 2015 vintage.
  • ACCENT OPTICAL / PHILIPS: RC 2400

    ACCENT OPTICAL RC 2400 Reaction chamber for preparation of Ohmic and Schottky contacts Maximum temperature: 680°C.
  • ACCENT OPTICAL / PHILIPS: RC 2400

    ACCENT OPTICAL RC 2400 Reaction chamber of Borosilicate glass for preparation of Ohmic and Schottky contacts Specifications: Maximum temp 680°C 40mm diameter quartz specimen stage with low mass heater Eurotherm digital temperature controller 0-99.9h timer with alarm Flowmeters for gas control with (2) input bubblers Stereozoom microscope not included.
  • AEROTECH: 1663

    AEROTECH 1663 Load and unload stations for PECVD systems Rate: 1600 / hour.
  • AIXTRON: 2400

    AIXTRON 2400 MOCVD reactor, 2", 3" and 4" Generation 2 Set up for Gaas, 650 nm (Laser) Configured for Ash3, PH3, SiH4, N2, H2 and Metal Organic As/P configuration Processing capacity: 11x2 MO Sources and Gases: Ga-1 , Ga-2 , Al-1 , Al-2 , IN-1 , IN-2 , Ma , DEZn , DETe Wafer size and capacity: 2" wafers (15x2), 3" (5x3), 4" (5x4) Temperature range: 850°C (Uses IR Lamp) 1996 vintage.
  • AIXTRON: 2600 G3 HT

    AIXTRON AIX 2600 G3 HT Planetary Reactor system IC Version TMGa-1, TMGa-2, TMAl-1, TMAl-2, Cp2Mg-1, TMIn-1, TMIn-2, TEGa-1, Cp2Mg-2 H2 and NH3 purifiers 7 single thermal baths and 1 double 24" x 2" GaN EpiTT 2007 vintage.
  • AIXTRON: 2600 G3 HT

    AIXTRON AIX 2600 G3 HT Planetary Reactor systems IC Version 24" x 2" GaN EpiTT 2008 vintage.
  • AIXTRON: EPIPLUS11

    AIXTRON: EpiPlus11 CCS MOCVD Reactor Maximum temperature: 1200°C Gas channels: (2) NH3, SiH4 2001 vintage.
  • AIXTRON: CRIUS

    AIXTRON Crius Reactor, 31x2" capacity Closed coupled showerhead system Used for the development and volume production of AlInGaN-based high power LEDs Gases: Glycol / Aluminum / Galium / Ammonia 208/120 V AC, 3 Phase, 50/60 Hz 2009 vintage.
  • AIXTRON: 200/4 RF-S

    AIXTRON 200/4 RF-S MOCVD / GaN System, 2" single-wafer 1 x 2-inch wafer configuration in horizontal-flow reactor cell Reactor cell integrated with M.Braun inert-atmosphere glovebox Inductive heating to 1200°C with Huttinger power supply Luxtron pyrometer for process temperature control Filmetrics white-light reflectometer for in situ monitoring, with dedicated PC Leybold D65BCS main pump Five MO lines, including one configured for dopant dilution Space allowance for three additional MO lines MOs used TMGa, TMIn, TMAl, Cp2Mg, ditertiarybutylsilane Hydride lines for ammonia, dilute silane, plus one spare Johnson Matthey Pd-diffusion cell for hydrogen purification SAES heated getter column for nitrogen purification Full PC and PLC control using Aixtron CACE v2.2 software Includes Aixtron wet-column exhaust scrubber Used for ca 550 growth runs only Offered with manuals and spares Gas cabinets and control panels can be included in purchase Currently powered down in cleanroom 2000 vintage.
  • AIXTRON: G5 HT

    AIXTRON G5 HT MOCVD / GaN furnace, 2", 4", 6", 8" Susceptor: 14x4" EPI application: GaN for blue LED Currently in a cleanroom 2010 vintage.
  • AIXTRON: CRIUS 31X2

    AIXTRON Crius 31x2 MOCVD system Specifications: CCS IC MOCVD SYSTEM CCS IC Reactor For Deposition On 31x2" Substrates - CSS-chamber with flip-top lid - Dual input plenum showerhead injector with cross-flow water cooling - SiC coated Graphite susceptor - Three zone tungsten heater - Max. temp 1200º - Optical access by six optical ports - Outer liner to prevent deposition on the chamber wall - Heat exchanger to control showerhead water temperature - Pyromter for temperature calibration - Power supply unit Glove Box For Inert Reactor Maintenance - Glove box with inert gas flow, 3 gloves on each side - Pressure control, overpressure protection - Interface for customized monitoring systems - Maintenance load lock - Gas purification - Circulation and regeneration unit - Integrated H2 sensor, O2 sensor, moisture sensor, temperature sensor - Moisture level = 1ppm - Oxygen level = 1 ppm - Vacuum wand Vacuum System - 2 pressure sensors, throttle valve, pressure control - Vacuum valves, check valves, filter station (particle and condensation trap) on wheels - Dual ball valve maintenance configuration Main Gas Blending Unit - Ventilated gas cabinet with active door locks - Gas blending and injection lines - Check valves at all critical positions - Metal sealed digital mass flow controllers - Particle filters in input lines - Manual valves in hydride input lines - Hydrogen and nitrogen carrier gas manifold - Run/vent stack (1 x hydrides and 2 x MOs) - Purge channels for reactor, heater and optical ports Vacuum Cleaner for Glove Box - High throughput vacuum cleaner unit with closed loop circulation and separate blower unit - Particle trap and double fine filter Ebara dry vacuum pump A70W Dynamic Reactor Height Adjustment - In-recipe control of reactor height - Allowing to adjust reactor height according to other growth parameters Computer Control System - ControlLogix, Programmable logic controller (PLC) - System Control, recipe execution, alarm handling - AIXACT process control software for online user interface - Visualization of system status, alarms, etc. - Management of system log book - Password protected access levels - RecipeManager: - Process recipe editor, text and spreadsheet - Repeat blocks for superlattice and quantum well growth, parameters definition - Ramping of temperatures, mass flows, pressures, etc. - Macro definition - Analyzer datalogging tool for analysis of logged data - Display and print out of data Remote PC - Client Desk Top PC with AIXACT software on desk - 19" TFT monitor, mouse, keyboard Safety System - Hardwired safety system - Hydrogen detection in glove box MO-G1 Standard Matalorganic Channel (qty 6) - (1xTMAl/H2, 2xCp2Mg/H2, 1xN.N./H2, 1xN.N./N2, 1xTEGa/N2) - 1 digital mass flow controller for carrier gas - 1 digital mass flow controller for pusher line - 1 pneumatic 4-way valve - 1 thermostated bath Lauda RM6, air-cooled (WxL 150 x 130 mm, depth 160 mm) with precise temperature control - 1 digital pressure controller for MO-cylinder - 1 Pneumatic 5-way vent/run valve - PLC hardware and integration in electronic and safety system MO-G1-D Double Standard Metalorganic Channel (2xTMIn) 2 Mtalorganic Sources Sharing One Thermobath - 2 digital mass flow controllers for carrier gas - 2 digital mass flow controllers for pusher line - 2 Pneumatic 4-way valves - 1 thermostated bath Lauda RM6, air-cooled (W x L 150 x 130 mm, depth 160 mm) with precise temperature control - 2 digital pressure controllers for MO-cylinder (one for each cylinder) - 2 AIXTRON pneumatic 5-way vent/run valves - PLC hardware and integration in electronic and safety system MO-G2-D Double Standard Gas Channel (2xNH3) - 2 gas channels share one gas inlet - 1 manual valve - 1 point of use filter - 2 digital mass flow controllers for hydride gas - 2 digital mass flow controllers for pusher line - 2 pneumatic 3-way valve - 2 pneumatic 5-way vent/run valves - PLC hardware and integration in electronic and safety system MO-G1 plus MO-G3 sharing one bath (2xTMGa) - 2 digital mass flow controller for carrier gas - 2 digital mass flow controller for pusher line - 1 digital mass flow controller for dopant injection - 2 pneumatic 4-way valve - 1 thermostated bath lauda RM6, air-cooled (W x L 150 x 130 mm, depth 160 mm) with precise temperature control - 2 digital pressure controller in dilution system - 1 pneumatic 5-way vent/run manifold valve - PLC hardware and integration in electronic and safety system MO-G5-10M Vacuum Lines - for leak testing of MO channels connected to the process pump (for 10 MO-sources) MO-G6 Dummy Line - For balancing gas flow switching - digital mass flow controller - Pneumatic 5-way vent/run valve - PLC hardware and integration in electronic and safety system N2/H2 separation of MO stack - Including 4 pneumatic valves, integration in electronic and safety system N2/H2 Mixture unit for one Run/Vent Stack (qty 2) (1xMO, 1xHyd Run/Vent) - Including 1 digital mass flow controller, 1 valve - Integration in electronic and safety system MO-Differential Run/Vent Pressure Balancing (qty 2) (2xMO Run/Vent) - Active pressure balancing for one Run/Vent tack - 1 differential pressure sensor - 1 x-more MFC + needle valve - 1 PID controller - PLC hardware and integration in electronic and safety system Upgrade from Lauda bath RM6 to RM25 (qty 2) (WxL 300 x 350 mm, depth 200 mm) Upgrade from Lauda bath air-cooled to water-cooled (qty 8) PROCESS CONTROL Laser Interferometer - In-situ monitoring of growth Included Spare Parts - Susceptor top plate, SiC coated (1) - Quartz susceptor support (1) - Liner (1) - thermocouple assembly Type C (1) - Optical probe (3) - Probe adaptors (3) - Set of O-rings (1) - Engineers kit (1) PURIFICATION Aeronex Purifier CE-2500KF - for NH3 purification - manual by-pass shut off valve - 2 manual isolation valves - integration in epitaxial system - Note: purifiers have to be shipped separately Aeronex Purifier CE-2500KF (qty 2) - Spare provision for N2 and H2 Moisture Sensor (H2 N2) (qty 2) - Michell "PURA" hygrometer - DP measurement range to possible down to -120ºC (1ppb) - Integration of read-out valve into control system. ADDITIONAL - Additional valves (N2H2) (qty 2) - Line Heating: additional sets of line heating for TMAI (qty 1) - Additional spare parts: 2x 31x2" susceptor - Large particole trap CT1000: replacement of existing IF1/200 filter with large capacity filter CT1000 Stored in a cleanroom 2008 vintage.
  • AIXTRON: CRIUS II CCS IC-2

    AIXTRON Crius II CCS IC-2 MOCVD system Max temp 1300°C (9) metal organics lines with spare and baths NH3 line with two input MFCs SiH4 line Spare line H2/N2 separation lines (2) Epison Argus with 3 reflectometer N2 and NH3 point of use purifiers (2) moisture sensors Main process pump Capable of running (55) two inch wafers and xx four inch wafers In-situ temperature and reflectance monitoring systems allow control of epitaxial growth of thin layers Currently installed 2010 vintage.
  • AIXTRON: 2000 HT

    AIXTRON 2000 HT Reactor, MOCVD Configuration: Nitride configuration (GaN) Planetary Reactor with Gas Foil Rotation Throughput: 7 x 2" RF Cooling Water Gases used: N2 H2 Sih4 HCL NH3 Contains 5 MO Baths MO Used: TMG, TMA, Cp2Mg, TEG, TMI, HFDMA(Hafnium) PC controller Ebara Dry Pump System Manual 2000 vintage.
  • AIXTRON: 200/4

    AIXTRON 200/4 MOCVD system Carrier: tray type 4" (before Ga-As wafer) (1 pc) Max 5" 12:22 2006 vintage.
  • AIXTRON: CRIUS

    AIXTRON Crius MOCVD Epi reactors, 31x2" capacity Epitt of Laytec monitoring system installed Currently installed 2008 vintage.
  • AIXTRON: AIX 2800 G4 HT

    AIXTRON AIX 2800 G4 HT MOCVD reactor, 42x2" Spare Parts: 3 KK-3645-1 2 Inch OUT SEGMENT (6-1) 8 KK-3646-1 2 Inch OUT SEGMENT (6-5) 1 Part No : 40020129 Accessory, Vacuum-wand, D=40 1 4002599 Auflagering "Collector" G4 1 N/A Diffusion-Barrier 1 SPECIAL Exhaust Collector 2 KK-3262-1 Exhaust connection upper(2800 SLEEVE G4용) 2 4002599 Exhauststutzen*Unterteil*2800G4-HT 6 Part No : 90430009 7.52X3.53, EPDM G4 DOR source inner O-ring 7 88.49X3.53, EPDM G4 DOR source outer 2 KK-3714 G4 Quartz Ceiling 2 KK-3635-1 G4 Star Quartz 1 40041894 Gasket*6-fold*G3*25x2*Graphite foil 1 KK-3238 Pull Down Plate (tension_disc) 1 40021106 sapphire ring 5 40040126 Satellite Pin D=1,I=48 1SET(6EA) satellite 7X2" satellite (B Grade) 2 40015202 spacer*ceiling*D560*t=0,3* 22 DD-3271 Star, Outer Quartz Pin 1 4006471 Stutzrohr*6-fach*flammpoliert 1 41020315 Supporting Disc 4 KK-3270 Supporting Disk Pin 4Inch 208/120 V, 3 Ph, 50/60 Hz, 26 KVA 4-wire and ground In production until Q1 2012 Currently installed in cleanroom 2009 vintage.
  • AIXTRON: AIX 2800 G4 HT

    AIXTRON AIX 2800 G4 HT MOCVD reactor, 42x2".
  • AIXTRON: AIX 2600 G3

    AIXTRON: AIX 2600 G3 MOCVD System Process: GaN Capacity: 24x2 2002 vintage.
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