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ID: 141677
MOCVD reactors / high efficiency GaN growth chambers, 2"
Set up for Sapphire, 21 pieces per run
EMCORE Confined Inlet FlowFlange with water-cooled cold plate
Removable 3-zone resistive Gen3 heater assembly with high temperature heat shields, insulators, and electrical feedthru's
EMCORE water-cooled Turbodisc susceptorless spindle rotation system
Integrated magnetofluidic rotation mechanism, motor and drive assembly
Complete reactor temperature management with water to water heat exchangers with temperature, flow, and water level alarms
Water-cooled baseplate assembly with thermocouple feedthru's and temperature regulation
Low differential pressure MFC's for alkyl distribution on FlowFlange
Pressure regulation network with low differential pressure MFC's for hydride and shroud distribution on FlowFlange
MFC purged 5-position viewport for in situ measurements
MKS 627 Baratron high temperature
Needle valves for gas purge of viewports and passthru flange
Mechanical span gauge for overpressure monitoring
DC power supplies for heater power
Dual differential pumped O-ring seals for reactor flanges with pump and pressure monitor
E300 GaN loadlock and platter transfer system:
High vacuum stainless steel loadlock chamber with viewports and (2) dwell stations for high throughput capability
(3) high purity SiC coated 12" wafer carriers
(1) blank SiC coated wafer carrier for temperature calibration
Pneumatically controlled, interlocked gate valve for isolation between growth chamber and loadlock chamber
GENMARK GB9 vacuum robot for wafer carrier transfer
Stainless steel end effect for robot transfer
MKS 622 Baratron for pressure measurement of loadlock chamber
Toxic gas sampling port
Mechanical span gauge for overpressure monitoring
Integrated glovebox wafer loading chamber with turntable
Interlocked, pneumatically controlled gate valve for isolation between loadlock chamber and glovebox
Automated antechamber with dedicated pump for wafer transfer
Regenerable Nitrogen purifier / recirculation system with automated control
Moisture monitoring with alarm ability
Storage shelves for extra wafer carriers / substrates
E300 pump system for growth chamber:
EBARA A70W process exhaust pump (297 cfm), water cooled motors, nitrogen purge system, microprocessor with alarm / control via digital interface
E300 vacuum exhaust system
3” exhaust line
Manual ISO-80 3” ball valve
Dual disposable high temperature particle filter
Pneumatic KF-40 ball valve
KF-40 leak detector port
Electronic pressure transducer
Throttling gate valve
Overpressure protection via switch gauge
E300 GaN loadlock pump system:
Turbomolecular pump for high vacuum
Pneumatic isolation 3” gate valve
ISO-100 protective stainless steel screen
High vacuum ion gauge
High vacuum convectron gauge
Low pressure nitrogen regulator
KF-25 leak detector port
Alkyl evacuation line
Dry scroll pump
(7) additional wafer carriers
SEKIDENKO 3-sensor pyrometer:
Single color optical fiber temperature measurement system
(3) pyrometer sensors
(3) optical fiber cables
Digital temperature display
Epimetric in situ monitor with dual head (EPI/2):
Absolute growth rate measurement
Real-time process stability verification
Includes computer and custom software
Standard system assemblies:
EMCORE E300 GaN gas panel sub assembly:
Switchable H2/N2 gas injection manifold for alkyl sources
High conductance H2, N2, and NH3 injection manifold
Metal sealed mass flow controllers for gas distribution
Electronic pressure measurement
Fast switching pneumatic valves for gas distribution
High purity fitting and tubing
1/8” bubbler legs in and out of each source
E300 uniframe system cabinet:
175” steel growth cabinet
Includes space for: growth chamber, loadlock, gas panel, refrigerator baths, vacuum system, and electronics
Interlocked clean lexan soft-seal doors
Solid panel soft-seal doors with louvers
Water cooled bath manifold
Gas panel: Alkyl sources:
(2) Cp2Mg single bubbler dilution network source manifolds:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
(2) TMIn dual bubbler push configuration source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier gas push
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMGa dilution network source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMAI standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMGa standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TEGa standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
(2) NESLAB RTE-221W water-cooled liquid bath:
20.5 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
(2) NESLAB RTE-111W water-cooled liquid bath:
7 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
Phantom line for alkyl injector block:
Direct input metal sealed MFC to injector block
NESLAB RTE-211W water-cooled liquid bath
12.3 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
Gas panel: Hydride sources:
SiH4 single input with dilution manifold:
High purity welded manifold with interlocked source and purge valves
Metal sealed source calibrated MFC’s with carrier gas calibrated dilution network
NH3 dual input hydride manifold:
High purity welded manifold with interlocked source and purge valves
Metal sealed source calibrated MFC’s
Electronics and control:
System electronics and control modules, enhanced:
EMCORE standard control modules for substrate rotation, reactor temperature control, reactor pressure, system logic control and pump activation
Integrated power load center with emergency power off switch
+15. -15. +24 VDC power supplies
Dual microprocessor units with analog and digital control boards, input boards, and RS232 / Ethernet ports for communication
EpiView control and monitoring software:
Graphical display windows for all gas panel, growth chamber, and exhaust components
User-configurable parameters for valve states, analog scales and set points
Data logging and viewing with configurable data rate and signal selection
Export of data files to Microsoft Excel for analysis and presentation, with automatic data compression
On-line help
Advanced troubleshooting and diagnostic tools, automated maintenance
Report generator for run analysis
Event recording of system status and alarms
Definable levels for system security
EpiView industrial PC system:
Industrial based modular PC
Pentium III 1 GHz or greater processor
512 MB RAM, 250 MB ZIP drive, and 20 GB or greater hard drive
High resolution LCD monitor, 16 MB video card
(2) Network cards enabling PC system and PC facility connection
Microsoft Windows 2000, service pack 1 or higher
Microsoft Word and Excel 2000
Hydrogen detector:
International sensor technology rack mounted readout with alarm output
Dual solid state sensor transmitters
Currently installed and powered on in cleanroom
2004 and 2005 vintage.
VEECO/EMCORE E300 GaNzilla Reaktor ist eine hochmoderne Kristallwachstumsausrüstung mit einer leistungsfähigen Kombination von Technologien zum Anbau hochwertiger GaN-Materialien. Der GaNzilla-Reaktor verfügt über eine Elektronenzyklotronresonanz (ECR) -Plasmaquelle und ein fortschrittliches elektronisches Abscheidungssystem, um eine reproduzierbare Einkristallschicht-für-Schicht-Epitaxie von GaN-Materialien zu erzeugen. Dies ermöglicht eine präzise Kontrolle des Wachstumsprozesses der Materialien. Die im GaNzilla verwendete ECR-Quelle ist in der Lage, hochdichte hochenergetische Plasmen in einer Vielzahl von Hintergründen zu produzieren. Dies ist auf eine Kombination von dedizierter Hardware zurückzuführen - einschließlich eines einstellbaren Frequenzmagnetfeldgenerators, einer speziellen Kusp-Falle und einer einstellbaren Gasstromeinheit - was zu hoher Ionenenergie, hohen Abscheidungsraten und niedrigen Partikeleinschlüssen führt. Neben der ECR-Quelle sorgt die Electronic Deposition (EDS) für eine präzise Kontrolle des Abscheideprozesses. Eine einzigartige Moly-Katalysatorlösung wird im EDSwerkzeug verwendet, das mit dem Gebrauch eines regulierbaren Mikrowellenfeldgenerators verbunden wird, auf einen Unterdruck-, niedrige Macht, niedrige Temperatur CVD Prozess hinauslaufend. Dies ermöglicht die Abscheidung von GaN-Schichten bei einer viel niedrigeren Temperatur als Standardmaterialien, was zu hochwertigeren Materialien und besseren Ausbeuten führt. VEECO E300 GaNzilla kommt mit einer Reihe von anderen Funktionen, die es eine ideale Wahl für den Anbau von GaN-Materialien machen. Dazu gehören ein benutzerfreundliches LCD-Display mit Touchscreen, eine Vakuumkammer mit niedrigem Profil und Edelstahlkonstruktion sowie eine Reihe von Sicherheitsfunktionen, um die Sicherheit der Bediener zu gewährleisten. EMCORE E300 GaNzilla ist ein vielseitiger und leistungsstarker Reaktor, der sowohl für Forschung als auch für industrielle Anwendungen eingesetzt werden kann. Die GaNzilla ist mit ihren hochwertigen Materialien und einer sicheren, effizienten Wachstumsleistung eine ideale Wahl für die Herstellung von GaN-Materialien für eine Vielzahl von Anwendungen.
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