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ID: 141677
MOCVD reactors / high efficiency GaN growth chambers, 2" Set up for Sapphire, 21 pieces per run EMCORE Confined Inlet FlowFlange with water-cooled cold plate Removable 3-zone resistive Gen3 heater assembly with high temperature heat shields, insulators, and electrical feedthru's EMCORE water-cooled Turbodisc susceptorless spindle rotation system Integrated magnetofluidic rotation mechanism, motor and drive assembly Complete reactor temperature management with water to water heat exchangers with temperature, flow, and water level alarms Water-cooled baseplate assembly with thermocouple feedthru's and temperature regulation Low differential pressure MFC's for alkyl distribution on FlowFlange Pressure regulation network with low differential pressure MFC's for hydride and shroud distribution on FlowFlange MFC purged 5-position viewport for in situ measurements MKS 627 Baratron high temperature Needle valves for gas purge of viewports and passthru flange Mechanical span gauge for overpressure monitoring DC power supplies for heater power Dual differential pumped O-ring seals for reactor flanges with pump and pressure monitor E300 GaN loadlock and platter transfer system: High vacuum stainless steel loadlock chamber with viewports and (2) dwell stations for high throughput capability (3) high purity SiC coated 12" wafer carriers (1) blank SiC coated wafer carrier for temperature calibration Pneumatically controlled, interlocked gate valve for isolation between growth chamber and loadlock chamber GENMARK GB9 vacuum robot for wafer carrier transfer Stainless steel end effect for robot transfer MKS 622 Baratron for pressure measurement of loadlock chamber Toxic gas sampling port Mechanical span gauge for overpressure monitoring Integrated glovebox wafer loading chamber with turntable Interlocked, pneumatically controlled gate valve for isolation between loadlock chamber and glovebox Automated antechamber with dedicated pump for wafer transfer Regenerable Nitrogen purifier / recirculation system with automated control Moisture monitoring with alarm ability Storage shelves for extra wafer carriers / substrates E300 pump system for growth chamber: EBARA A70W process exhaust pump (297 cfm), water cooled motors, nitrogen purge system, microprocessor with alarm / control via digital interface E300 vacuum exhaust system 3” exhaust line Manual ISO-80 3” ball valve Dual disposable high temperature particle filter Pneumatic KF-40 ball valve KF-40 leak detector port Electronic pressure transducer Throttling gate valve Overpressure protection via switch gauge E300 GaN loadlock pump system: Turbomolecular pump for high vacuum Pneumatic isolation 3” gate valve ISO-100 protective stainless steel screen High vacuum ion gauge High vacuum convectron gauge Low pressure nitrogen regulator KF-25 leak detector port Alkyl evacuation line Dry scroll pump (7) additional wafer carriers SEKIDENKO 3-sensor pyrometer: Single color optical fiber temperature measurement system (3) pyrometer sensors (3) optical fiber cables Digital temperature display Epimetric in situ monitor with dual head (EPI/2): Absolute growth rate measurement Real-time process stability verification Includes computer and custom software Standard system assemblies: EMCORE E300 GaN gas panel sub assembly: Switchable H2/N2 gas injection manifold for alkyl sources High conductance H2, N2, and NH3 injection manifold Metal sealed mass flow controllers for gas distribution Electronic pressure measurement Fast switching pneumatic valves for gas distribution High purity fitting and tubing 1/8” bubbler legs in and out of each source E300 uniframe system cabinet: 175” steel growth cabinet Includes space for: growth chamber, loadlock, gas panel, refrigerator baths, vacuum system, and electronics Interlocked clean lexan soft-seal doors Solid panel soft-seal doors with louvers Water cooled bath manifold Gas panel: Alkyl sources: (2) Cp2Mg single bubbler dilution network source manifolds: Five valve high-purity welded manifold Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor (2) TMIn dual bubbler push configuration source manifold: Five valve high-purity welded manifold Metal sealed mass flow controllers for source, carrier gas push Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor TMGa dilution network source manifold: Five valve high-purity welded manifold Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor TMAI standard source manifold: Five valve high-purity welded manifold Metal sealed mass flow controller Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor TMGa standard source manifold: Five valve high-purity welded manifold Metal sealed mass flow controller Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor TEGa standard source manifold: Five valve high-purity welded manifold Metal sealed mass flow controller Metal sealed integrated pressure controller Integrated spool piece for binary gas monitor (2) NESLAB RTE-221W water-cooled liquid bath: 20.5 liters reservoir volume Four digit digital display, -23°C to +150°C Water-cooled heat exchanger (2) NESLAB RTE-111W water-cooled liquid bath: 7 liters reservoir volume Four digit digital display, -23°C to +150°C Water-cooled heat exchanger Phantom line for alkyl injector block: Direct input metal sealed MFC to injector block NESLAB RTE-211W water-cooled liquid bath 12.3 liters reservoir volume Four digit digital display, -23°C to +150°C Water-cooled heat exchanger Gas panel: Hydride sources: SiH4 single input with dilution manifold: High purity welded manifold with interlocked source and purge valves Metal sealed source calibrated MFC’s with carrier gas calibrated dilution network NH3 dual input hydride manifold: High purity welded manifold with interlocked source and purge valves Metal sealed source calibrated MFC’s Electronics and control: System electronics and control modules, enhanced: EMCORE standard control modules for substrate rotation, reactor temperature control, reactor pressure, system logic control and pump activation Integrated power load center with emergency power off switch +15. -15. +24 VDC power supplies Dual microprocessor units with analog and digital control boards, input boards, and RS232 / Ethernet ports for communication EpiView control and monitoring software: Graphical display windows for all gas panel, growth chamber, and exhaust components User-configurable parameters for valve states, analog scales and set points Data logging and viewing with configurable data rate and signal selection Export of data files to Microsoft Excel for analysis and presentation, with automatic data compression On-line help Advanced troubleshooting and diagnostic tools, automated maintenance Report generator for run analysis Event recording of system status and alarms Definable levels for system security EpiView industrial PC system: Industrial based modular PC Pentium III 1 GHz or greater processor 512 MB RAM, 250 MB ZIP drive, and 20 GB or greater hard drive High resolution LCD monitor, 16 MB video card (2) Network cards enabling PC system and PC facility connection Microsoft Windows 2000, service pack 1 or higher Microsoft Word and Excel 2000 Hydrogen detector: International sensor technology rack mounted readout with alarm output Dual solid state sensor transmitters Currently installed and powered on in cleanroom 2004 and 2005 vintage.
VEECO/EMCORE E300 GaNzilla Reaktor ist eine hochmoderne Kristallwachstumsausrüstung mit einer leistungsfähigen Kombination von Technologien zum Anbau hochwertiger GaN-Materialien. Der GaNzilla-Reaktor verfügt über eine Elektronenzyklotronresonanz (ECR) -Plasmaquelle und ein fortschrittliches elektronisches Abscheidungssystem, um eine reproduzierbare Einkristallschicht-für-Schicht-Epitaxie von GaN-Materialien zu erzeugen. Dies ermöglicht eine präzise Kontrolle des Wachstumsprozesses der Materialien. Die im GaNzilla verwendete ECR-Quelle ist in der Lage, hochdichte hochenergetische Plasmen in einer Vielzahl von Hintergründen zu produzieren. Dies ist auf eine Kombination von dedizierter Hardware zurückzuführen - einschließlich eines einstellbaren Frequenzmagnetfeldgenerators, einer speziellen Kusp-Falle und einer einstellbaren Gasstromeinheit - was zu hoher Ionenenergie, hohen Abscheidungsraten und niedrigen Partikeleinschlüssen führt. Neben der ECR-Quelle sorgt die Electronic Deposition (EDS) für eine präzise Kontrolle des Abscheideprozesses. Eine einzigartige Moly-Katalysatorlösung wird im EDSwerkzeug verwendet, das mit dem Gebrauch eines regulierbaren Mikrowellenfeldgenerators verbunden wird, auf einen Unterdruck-, niedrige Macht, niedrige Temperatur CVD Prozess hinauslaufend. Dies ermöglicht die Abscheidung von GaN-Schichten bei einer viel niedrigeren Temperatur als Standardmaterialien, was zu hochwertigeren Materialien und besseren Ausbeuten führt. VEECO E300 GaNzilla kommt mit einer Reihe von anderen Funktionen, die es eine ideale Wahl für den Anbau von GaN-Materialien machen. Dazu gehören ein benutzerfreundliches LCD-Display mit Touchscreen, eine Vakuumkammer mit niedrigem Profil und Edelstahlkonstruktion sowie eine Reihe von Sicherheitsfunktionen, um die Sicherheit der Bediener zu gewährleisten. EMCORE E300 GaNzilla ist ein vielseitiger und leistungsstarker Reaktor, der sowohl für Forschung als auch für industrielle Anwendungen eingesetzt werden kann. Die GaNzilla ist mit ihren hochwertigen Materialien und einer sicheren, effizienten Wachstumsleistung eine ideale Wahl für die Herstellung von GaN-Materialien für eine Vielzahl von Anwendungen.
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